STUDY OF THERMAL DEFORMATION OF MICROELECTRONICS PACKAGING PRODUCT BY INTERFEROMETRIC TECHNIQUE

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摘要 Inthispaper,theout-of-planedeformationofsiliconsurfaceofDirectChipAttachment(DCA)assembly,underthermalloading,wasmeasuredinreal-timebyTwyman/Greeninterferometry.Thecontourmapsoftheout-of-planedisplacementfieldsofsiliconsurfaceunderthermalloadingandcyclingofvarioustemperaturewereobtained.Experimentalresultsshowthattherelationbetweentheout-of-planedisplacementandtemperatureisnonlinearandvarieswithtempera-turecycling,duetononlinearmechanicalbehaviorofthematerialsusedinelectronicpackaging.Acomparisonoftheout-of-planedisplacementfieldsofsiliconsurfacemeasuredbyT/Ginterferometryinreal-timeandreplicatingtechniqueofhightem-peraturespecimengratingofmoireinterferometrywasmade.
机构地区 不详
出处 《力学学报:英文版》 1997年2期
出版日期 1997年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)