Thin Emitter Structure Improved Turn-on Characteristics in RSD-中国期刊网

摘要薄emitter结构被介绍进相对地交换的负阻电晶体(RSD)改进它的刺激特征。根据刺激状况的分析，薄emitter结构能够在刺激过程期间为被触发的血浆层P1减少抽取行动，并且令人满意被触发的电的充电不能精疲力尽因此使RSD能一致地打开的要求。在状态上薄emitterRSD等价于一个不对称的大头针二极管模型。RSD的前面的电压落下与做的减少掉落的模拟结果表演在某个范围在p开+-emitter，并且当做的集中是极其低的时，p+-emitter的宽度的减少能获得低前面的电压落下。薄emitterRSD薄片被sintering艾尔在n-Si上做。测试结果证明他们的刺激过程是一致的，当山峰变换电流是5500A时，电压落下是7.5V。

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Thin Emitter Structure Improved Turn-on Characteristics in RSD

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Thin Emitter Structure Improved Turn-on Characteristics in RSD

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