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2008年5期
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Low voltage n-type OFET based on double insulators
Low voltage n-type OFET based on double insulators
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摘要
最高的接触n类型有低操作电压的器官的地效果晶体管被采用Ta2O5/PMMA作为双绝缘体和PTCDI-C12作为半导体活跃的层。Ta2O5层被使用简单节俭的阳极化技术准备,PMMA层被使用纺纱涂层方法准备。与有单个Ta2O5绝缘体,有两倍绝缘体的设备显示出显然更好的电的性能。它有0.063厘米2/Vs,的地效果电子活动性1.7×1的开/关比率04和2.3V的阀值电压。
DOI
54yy8y1x40/623052
作者
ZHOU Jian-lin ZHANG Fu-jia
机构地区
不详
出处
《光电子快报:英文版》
2008年5期
关键词
场效应器件
电压
双绝缘体
半导体
分类
[电子电信][物理电子学]
出版日期
2008年05月15日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
光电子快报:英文版
2008年5期
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相关关键词
场效应器件
电压
双绝缘体
半导体
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