Excitonic optical absorption in semiconductors under intense terahertz radiation-中国期刊网

摘要 TheexcitonicopticalabsorptionofGaAsbulksemiconductorsunderintenseterahertz(THz)radiationisinvesti-gatednumerically.Themethodofsolvinginitial-valueproblems,combinedwiththeperfectmatchedlayertechnique,isusedtocalculatetheopticalsusceptibility.InthepresenceofadrivingTHzfield,inadditiontotheusualexcitonpeaks,2preplicaofthedark2pexcitonandeven-THz-photon-sidebandsofthemainexcitonresonanceemergeinthecontinuumabovethebandedgeandbelowthemainexcitonresonance.Moreover,tounderstandtheshiftofthepositionofthemainexcitonpeakunderintenseTHzradiation,itisnecessarytotakeintoconsiderationboththedynamicalFranz-KeldysheffectandacStarkeffectsimultaneously.Formoderatefrequencyfields,themainexcitonpeakdecreasesandbroadensduetothefield-inducedionizationoftheexcitonswithTHzfieldincreasing.However,forhighfrequencyTHzfields,thecharacteristicsoftheexcitonrecurevenunderverystrongTHzfields,whichaccordswiththerecentexperimentalresultsqualitatively.

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Excitonic optical absorption in semiconductors under intense terahertz radiation

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Excitonic optical absorption in semiconductors under intense terahertz radiation

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