Investigation of dislocations in 8° off-axis 4H-SiC epilayer-中国期刊网

摘要 Thispaperreportsthattheetchingmorphologyofdislocationsin8°off-axis4H-SiCepilayerisobservedbyusingascanningelectronicmicroscope.Itisfoundthatdifferenttypesofdislocationscorrespondwithdifferentdensitiesandbasalplanedislcation(BPD)arrayandthreadingedgedislocation(TED)pileupgroupliealongsomecertaincrystaldirectionsintheepilayer.Itisconcludedthattheelasticenergyofthreadingscrewdislocations(TSDs)ishighestandTEDsislowestamongthesedislocations,sothedensityofTSDsislowerthanTEDs.TheBPDscanconverttoTEDsbutTSDscanonlypropagateintotheepilyerinspiteofthehigherelasticenergythanTEDs.ThereasonoftheformofBPDsarrayinepilayeristhatthebigstepalongthebasalplanecausedbyfacedefectsblockedtheupstreamatoms,andTEDspileupgroupisthatthedislocationsslideisblockedbydislocationgroupsinepilayer.

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Investigation of dislocations in 8° off-axis 4H-SiC epilayer

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Investigation of dislocations in 8° off-axis 4H-SiC epilayer

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