简介:Inthisstudy,micro-hollowcathodedischarge(MHCD)isinvestigatedbyafluidmodelwithdrift-diffusionapproximation.TheMHCdeviceisacathode/dielectric/anodesandwichstructurewithoneholeofadiameterD=200μm.ThegasisaNe/Xemixtureatapressurep=50~500Torr.Theevolutionsofthedischargeshowthattherearetwodifferentdischargemodes.AtlargerpDthedischargeplasmaandhighdensityexcitedspeciesexpandalongthecathodesurfaceand,aringeddischargemodeisformed.AtsmallerpD,thedischargeplasmaandtheexcitedspeciesexpandalongtheaxisofthecathodeaperturetoformacolumnardischarge.
简介:Electricalpropertyofamicro-plasmaspraysystemwithdifferentworking-gasfeedingschemeswastestedtooptimizetheplasmasprayprocess.Thearcvoltagewithanintegratedgasinjectionmodeishigherthanthatwithradialinjectionoraxialinjectionmodes.Thus,anintegratedgasinjectionmodewithanexcellentelectricalcharacteristicwasadoptedtodepositalumina-titaniacoating.Themicrostructure,bondingstrengthandhardnessoftheplasmasprayedalumina-titaniacoating,asafunctionofthesprayingparameters,e.g.,plasmacurrent,gasflowrateandgaspressure,werestudied.Itwasshownthatthesprayingparametersaffectedremarkablyontheinicrostructureofthecoating.Differenttendenciesinbondingstrengthandhardnesswerealsoshownfordifferentsprayingparameters.Atanarccurrentof250A,agasflowrateof20L/rninandagaspressureof0.5MPa,thebondingstrengthandmicro-hardnessofthecoatingsreach40.6MPaandHV1406.1,respectively.
简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.