简介：Changesoftheaveragebrightnessandnon-uniformityofdarkoutputimages,andqualityofpicturescapturedundernaturallightingforthecolorCMOSdigitalimagesensorsirradiatedatdifferentelectrondoseshavebeenstudiedincomparisontothosefromtheγ-irradiatedsensors.Fortheelectron-irradiatedsensors,thenon-uniformityincreasesobviouslyandasmallbrightregiononthedarkimageappearsatthedoseof0.4kGy.Theaveragebrightnessincreasesat0.4kGy,increasessharplyat0.5kGy.Thepictureisveryblurryonlyat0.6kGy,showingthesensorundergoessevereperformancedegradation.ElectronradiationdamageismuchmoreseverethanγradiationdamagefortheCMOSimagesensors.Apossibleexplanationispresentedinthispaper.

简介：本文以集成电路为代表介绍了元器件失效分析方法、流程、技术及发展，失效分析是元器件质量、可靠性保证的重要环节，随着元器件设计与制造技术的提高以及失效分析技术及分析工具水平的提高，对元器件失效模式及失效机理的认识逐步加深，失效分析工作将发挥更大的作用。