简介:A4.1GHztwo-stagecascodeLow-NoiseAmplifier(LNA)withElectro-StaticDischarge(ESD)protectionispresentedinthispaper.TheLNAhasbeenoptimizedusingESDandLNAco-designmethodologytoachieveagoodperformance.Post-layoutsimulationresultsexhibitaforwardgain(S21)ofabout21dB,areverseisolation(S12)oflessthan-18dB,aninputreturnloss(S11)oflessthan-16dB,andanoutputreturnloss(S22)oflessthan-17dB.Moreover,theNoiseFigure(NF)is2.6dB.ThisdesignisimplementedinTSMC0.18μmRFCMOStechnologyandthedieareais0.9mm×0.9mm.
简介:A2.4GHz0.18μmCMOSgain-switchedsingle-endLowNoiseAmplifier(LNA)andapassivemixerwithnoexternalbalunfornear-zero-IF(IntermediateFrequency)/RF(RadioFrequency)applicationsaredescribed.TheLNA,fabricatedinthe0.18μm1P6MCMOStechnology,adoptsagain-switchedtechniquetoincreasethelinearityandenlargethedynamicrange.ThemixerisanIQ-basedpassivetopology.MeasurementsoftheCMOSchipareperformedontheFR-4PCBandtheinputismatchedto50Ω.CombiningLNAandmixer,thefront-endmeasuredperformancesinhighgainstateare:-15dBofS11,18.5dBofvoltagegain,4.6dBofnoisefigure,-15dBmofⅡP3,-85dBmto-10dBmdynamicrange.Thefullcircuitdrains6mAfroma1.8Vsupply.
简介:Afullydifferentialcomplementarymetaloxidesemiconductor(CMOS)lownoiseamplifier(LNA)for3.1–10.6GHzultra-wideband(UWB)communicationsystemsispresented.TheLNAadoptscapacitivecross-couplingcommon-gate(CG)topologytoachievewidebandinputmatchingandlownoisefigure(NF).Inductiveseries-peakingisusedfortheLNAtoobtainbroadbandflatgaininthewhole3.1–10.6GHzband.Designedin0.18μmCMOStechnology,theLNAachievesanNFof3.1–4.7dB,anS11oflessthan–10dB,anS21of10.3dBwith±0.4dBfluctuation,andaninput3rdinterceptionpoint(IIP3)of–5.1dBm,whilethecurrentconsumptionisonly4.8mAfroma1.8Vpowersupply.ThechipareaoftheLNAis1×0.94mm2.