简介:CharacteristicsofsiliconoxynitridesmadebyECRplasmas;CharacterizationandcomparisonofPECVDsiliconnitrideandsiliconoxynitridedielectricforMIMcapacitors;CharacterizationofsiliconoxynitridethinfilmsdepositedbyECR-PECVD;Characterizationofsiliconoxynitridesandhigh-kdielectricmaterialsbyangle-resolvedX-rayphotoelectronspectroscopy
简介:[篇名]3-inchfull-colorOLEDdisplayusingaplasticsubstrate,[篇名]AsignificantimprovementinmemoryretentionofMFISstructurefor1T-typeferroelectricmemorybyrapidthermalannealing,[篇名]Accuratereliabilityevaluationofnon-uniformultrathinoxynitridcandhigh-klayers,[篇名]Advancedgatedielectricmaterialsforsub-100nmCMOS,[篇名]AINfilmscpitaxialyformedbydirectnitridationofsapphireusingaluminumoxynitridcasabufferlayer,[篇名]Amorphoussilicon-oxynitridcsubmicronfibres,[篇名]CharacteristicsofCr-Al-N-Othinfilmspreparedbypulsedlaserdeposition.