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简介：Inthispaper,weshowthatapositiverecurrentuidqueueisautomaticallyV-uniformlyergodicforsomefunctionV≥1butneveruniformlyergodic.Thisrevealsasimilarityofergodicitybetweenafluidqueueandaquasi-birth-and-deathprocess.AsabyproductofV-uniformergodicity,wederivecomputableboundsontheexponentialmomentsofthebusyperiod.

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简介：TheV^t-integralasdefinedin[2],whichiseqnivalenttoM^2-integrslasdefinedinTrigonometreseriesbyZygmundisusedtosumtrigonometricseiesin[1].Inthispaper,someconvergenttheoremsofV^2-integralareestablished.

简介：Ｒｏｔａｔｉｏｎ　ｉｎ　Ｒｅａｃｔｉｏｎ　１９Ｆ＋５１ＶＲｏｔａｔｉｏｎｉｎＲｅａｃｔｉｏｎ１９Ｆ＋５１Ｖ￥ＷａｎｇＱｉ；ＬｕＪｕｎ；ＸｕＨｕｓｈａｎ；ＬｉＳｏｎｇｌｉｎ；ＺｈｕＹｏｎｇｔａｉａｎｄＺｈａｎｇＹｕｈｕＩｎｄＬｓｓｉ...

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简介：Wepresenta940nmquasi-continuouswavesemiconductorlaserdesignedasabuildingblockforhigh-powerfibercoupledpumpmodules.Thelasercomprisesa400μmnarrow-stripearraymountedonanaluminumnitridesubstrateusinghardsolder.Thechiphasbeenoptimizedforhighopticalpowerandlowlateralfar-fieldangles.Twoverticalandsixlateralstructurevariationshavebeeninvestigatedtodeterminethebestachievableperformance.Operatingat1mspulsewidthandarepetitionrateof10Hz,thelaserdevicereachesamaximumpulsepowerof86Wfroma400μmapertureandmorethan62%maximumconversionefficiency.Lowlateralfar-fieldangles(95%powerenclosed)of11.5and13.5,dependingontheepitaxialdesign,enableefficientmultimodefibercoupling.Thepotentialforhighlyreliableapplicationshasbeendemonstrated.

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简介：Theeffectofbismuth（Bi）forbothVO2+/VO2+andV3+/V2+redoxcouplesinvanadiumflowbatteries（VFBs）hasbeeninvestigatedbydirectlyintroducingBionthesurfaceofcarbonfelt（CF）.TheresultsshowthatBihasnocatalyticeffectforVO2+/VO2+redoxcouple.Duringthefirstchargeprocess,BiisoxidizedtoBi3+（neverreturnbacktoBimetalinthesubsequentcycles）duetothelowstandardredoxpotentialof0.308V（vs.SHE）forBi3+/BiredoxcouplecomparedwithVO2+/VO2+redoxcoupleandBi3+exhibitno（orneglectable）electro-catalyticactivity.Additionally,therelationshipbetweenBiloadingandelectrochemicalactivityforV3+/V2+redoxcouplewasstudiedindetail.2wt%Bi-modifiedcarbonfelt（2%-BiCF）exhibitsthehighestelectrochemicalactivity.Usingitasnegativeelectrode,ahighenergyefficiency（EE）of79.0%canbeachievedatahighcurrentdensityof160mA/cm2,whichis5.5%higherthanthepristineone.Moreover,theelectrolyteutilizationratioisalsoincreasedbymorethan30%.Eventhecelloperatedat140mA/cm2forover300cycles,theEEcanreach80.9%withoutobviousfluctuationandattenuation,suggestingexcellentcatalyticactivityandelectrochemicalstabilityinVFBs.

简介：金属V作为贮氢材料具有良好的增压性能因而在ICF靶丸制备工艺中备受关注，但是金属V难活化，严重影响了其在增压材料方面的应用。为了改善金属V的活化性能，向金属V中掺杂少量的金属Ni以期达到对其改性和改善其贮氢性能的目的。

简介：全部的内部分区和(尖端)为~(12)在温度被计算直到6000KC~(16)O_2。用计算分区函数，我们生产ν_的线紧张~(12)的3乐队在几高温度的C~(16)O_2。结果证明计算的线紧张在在直到3000K的温度的HITRAN数据库的对那些的很好的同意，它在高温度为尖端和线紧张的计算提供强壮的支持。然后，计算被扩大推进高温度，和ν_的模仿的系列~(12)的3乐队在5000和6000K的C~(16)O_2被报导。

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简介：Vanadiumalloys,especiallythatofV4Cr4Ti,aresupposedasthepromisingcandidatestructuralmaterialforfusionapplicationsfortheirgoodthermalproperties,hightemperaturestrengthandtheinherentlowactivationcharacteristics.However,inrecent

简介：At-hyperwheel(t≥3)oflengthl(orW(t)lforbrevity)isat-uniformhypergraph(V,E),whereE={e1,e2,...,el}andv1,v2,...,vlaredistinctverticesofV=∪eii=1lsuchthatfori=1,...,l,vi,vi+1∈eiandei∩ej=P,j∈/{i1,i,i+1},wheretheoperationonthesubscriptsismodulolandPisavertexofVwhichisdifferentfromvi,1≤i≤l.Inthispaper,theminimumcoveringproblemofMCλ(3,W(3)4,v)isinvestigated.DirectandrecursiveconstructionsonMCλ(3,W(3)4,v)arepresented.Thecoveringnumbercλ(3,W(3)4,v)isfinallydeterminedforanypositiveintegersv≥5andλ.

简介：Vanadiumalloys(V-Cr-Tiseries)areimportantcandidatematerialsforblanketcomponentsoffusionreactorsduetotheirlowactivationandhighstrengthatelevatedtemperatures.Low-temperatureirradiationembrittlementdeterminestheoperationtemperaturelimitofVanadiumalloysfortheapplicationtostructuralmaterialsoffusionreactorsirradiationresponseofvanadiumalloysneedstobeclarifiedfortheirapplication.Inthepresentstudy,specimensoftwoalloys(V-4Cr-4TiandV-5Cr-5Ti)wereirradiatedwithenergeticHeionsandheavyionstounderstandhardeningofthealloysduetoheliumaccumulationandcascadedamageproduction.

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