简介：ThemethodsforprotectingInPsurfaceagainstdegradationduringannealing,includingencapsulantandencpsulant-freetechniques;rapidthermalan-nealingofInPimplantedlayers;implantedionspeciesandsomeprofilesoftypicaldopants,etc.,theyareallthekeytechniquesconcerningionimplantationintose-mi-insulatingInP,andhavebeenreviewedsyntheticallyaswell.

简介：SomenewresultsofimplantdisorderingonInPbasedMQWstructuresbyim-plantedcompositionaldisorderingarepresented.TheenergyshiftofPLpeakdependsonionspecies,iondose,annealingconditionsandtargettemperature,TheresultsindicatethatthenonactiveionssuchasF^+andNe^+arethebestcandiatesforIICD,theiondosewhichcausedbiggestblueshiftisaround1×10^14cm^-2forroomtemperatureimplantationand5×10^14cm^-2foranelevatedimplantedtemperatureof200℃andtheoptimumannealingconditionisapproximately750℃for30s.AESandTEMcharacterizationsuggeststhationbombardmentbynonelectricallyactiveionssuchasF^+,Ne^+inducedsameamountoflayerinterdiffusionwhichresultsinthebandgapblueshiftduetothecompositionalchanges.

简介：InPintegratedphotonicshasbecomeacriticalenablerformoderntelecommunications,andispoisedtorevolutionizedatacommunications,precisionmetrology,spectrometry,andimaging.Thepossibilitytointegratehigh-performanceamplifiers,lasers,modulators,anddetectorsincombinationwithinterferometerswithinonechipisenablinggame-changingperformanceadvances,energysavings,andcostreductions.Genericintegrationacceleratesprogressthroughtheseparationofapplicationsfromacommontechnologydevelopment.Inthispaper,wereviewthecurrentstatusinInPintegratedphotonicsandtheeffortstointegratethenextgenerationofhigh-performancefunctionalityonacommonsubstrateusingthegenericmethodology.

简介：Weproposethatnanomaterialsareusedforfibers.Anovelnano-InPdopedfiberhasbeenfabricatedbythemethodofmodifiedchemicalvapordeposition(MCVD).Ithasbeenmeasuredthatthedopingconcentrationofphosphoruselementis0.1%.TherelationshipbetweenrefractiveindexandthewavelengthisobtainedbyfittingexperimentaldatatoSellmeierequation.Dispersionofthefiberhasbeencalculatedinthewavelengthrangeof1.2-1.6μm.Asthewavelengthvariesfrom1.20μmto1.60μm,dispersionparamete...

简介：WehavemeasuredthedeepenergyleveloftheInP:Fewhichissemi-insulatorthroughthemethodofOTCS.TheeffectoflightintensityonOTCSmeasurementismainlydiscussed.ThereareelectrontrapofET=0.034eVandholetrapofET=1.13eVinInP:Feunderthestronglightandlowtemperature.ThelocationoftheOTCSpeakofelectrontrap(ET=0.34eV)movestowardsthedirectionofhightemperaturer,whenthelightintensitywasincreased,ETisdifferentunderdifferentlightintensity.Itiscorrectedintermsoftheorythatthestuffratioofthedeepenergylevelisaffectedbythelightintensity.Theexperimentsshowthattheerrorisdecreasedgreatlywiththecorrection.

简介：Zinchasbeendiffusedinton-typeInxGa1-xAs,InPandGaAsinclosedam-poules,andtheexperimentaldataforInxGa1-xAsrarelyreportedpreviouslyhavebeenob-tained,TheoreticallythelinearrelationsipbetweenlogarithmicdiffusioncoefficientlnDandthecompositionxhasbeendemonstrated,whichisingoodagreementwiththeexperimentalresults.ThecalculateddiffusionjunctiondepthforInGaAsbasedonthediffusionmodelinwhichD^∝c^2isassumedalsoagreeswellwiththatoftheexperment,Finallytheoveralldiffusiontimeinamultiayerheterostructurewasapproximatedast=(∑√-ti）^2.

简介：WestudythroughelectromagneticmodelingtheabsorptionoflightofagivenwavelengthinanarrayofhorizontalInPnanowiresofdiameterlessthan100nm.Suchabsorptionisperformedmostefficientlybyusingpolarizedlightandbyexcitingacoupledopticalresonanceinasparsearray.Inthatcase,weexcitearesonanceintheindividualnanowiresandcoupletheresonancesinneighboringnanowiresthroughalatticeresonanceoftheperiodicarray.Atsucharesonance,anarraywithnanowiresof80nmindiametercanabsorbmorethaneighttimesmorestronglythanatight-packedarray,despitecontainingaseventimessmalleramountoftheabsorbingInPmaterial.

简介：ThedarkcurrentofIn0.47Ga0.53As/InPheterojunctionphotodiodes(HPDs)wasanalysed.Wefoundthatthereexistsanewdarkcurrentcompo-nent-deeplevel-assistedtunnelingcurrent.DLTSwasusedtomeasuretheIn0.47Ga0.53As/InPHPDs.Anelectronictrapwhichhasathermalactivationenergyof0.44eV,levelconcentrationof3.10×10^13cm^-3andelectroniccapturecrosssec-tionof1.72×10^12cm^2hasbeenfound.It^ˊsexistenceresultsinthenewtunnelingcurrent.

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简介：同步辐射软X射线（白光）对InP表现进行了辐照。并对样品的表面电子结构作了UPS和XPS分析。结果显示，样品表面电子态变化明显，P3a峰化学位移大于In4d峰。与In非键合的P2p峰面积辐照后显著增加。说明软X射线对InP表现F原子的电离损伤要大于In原子。

简介：采用原子力显微镜（AFM）和X射线光电子能谱（XPS）对不同处理流程后的InP（100）表面粗糙度及化学成分进行测试分析，优选出C、O元素浓度较低，且表面均方根粗糙度影响较小的表面清洗方法。通过比较键合结构的薄膜转移照片可知，表面清洗后的干燥与除气步骤可较好地去除键合界面中的空洞和气泡，从而提高键合质量。键合结构的电子显微镜（SEM）照片，X射线双晶衍射曲线（XRD）及I-V测试分析表明键合结构具有良好的机械、晶体及电学性质。

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简介：p类型(100)上的HfO2电影的乐队排列磁控管劈啪作响种的InP底层被调查。化学状态和系统的结合的特征被X光检查光电子光谱学(XPS)描绘。结果证明没有Hf-P或Hf在里面的存在，有在2在接口的O3和InPO4。紫外分光光度计(UVS)被采用获得HfO2的乐队差距价值。在3d和Hf4f，核心级的系列和原子价系列被采用获得HfO2/InP的原子价乐队偏移量。试验性的结果出现(5.88??T

简介：利用室温光致荧光谱（PL）研究金属有机物化学气相沉积（MOCVD）方法中温度参数对InP衬底上生长In0.53Ga0.47As/InP量子阱材料质量的影响.通过两组实验分别研究并分析了生长温度对In0.53Ga0.47As层和InP层材料质量的影响,得到了In0.53Ga0.47As层和InP层最佳生长温度分别为650℃和600℃.利用优化条件制备In0.53Ga0.47As/InP基PIN型探测器,得到器件的暗电流较优化前小2个数量级.

简介：ReactiveionetchingcharacteristicsofGaAs,GaSb,InPandInAsusingCl2/Arplasmahavebeeninvestigated,itisthat,etchingratesandetchingprofilesasfunctionsofetchingtime,gasflowratioandRFpower.Etchratesofabove0.45μm/rinand1.2μm/rinhavebeenobtainedinetchingofGaAsandGaSbrespectively,whileveryslowetchrates(＜40nm/rin)wereobservedinetchingofIn-containingmaterials,whichwerelinearlyincreasedwiththeappliedRFpower.EtchedsurfaceshaveremainedsmoothoverawiderangeofplasmaconditionsintheetchingofGaAs,InPandInAs,however,werepartlyblackenedinetchingofGaSbduetoaroughappearance.

简介：实验观测到X射线反向曲线具有双晶特征。研究表明缺陷聚集在孪晶晶界。应力在晶界边缘处得到释放。应力的释放导致享晶和其它缺陷的形成。由于缺陷的形成在缺陷的附近产生无位错无应力或低位错小应力区。因此我们提出一种孪晶模型来解释实验结果。应力（主要是热应力），化学配比的偏离和杂质的非均匀分布是液封直接（LEC）InP单晶生长过程中产生孪晶的主要因素。研究了液封直拉（LEC）InP(111）面上的孪晶。本文中讨论了上面提到的孪晶模型的实验证据和如何得到无孪晶液封直接（LEC）InP单晶。

简介：AsimulationmethodforthethermalanalysisofInAlAs/InGaAs/InPmid--infraredquantumcascadelasers(QCLs)basedonfinite--elementmethod(FEM)ispresented.ThethermaldistributionoftheQCLsonsubstrate--sideorepilayer--sidemountingformsissimulatedandtheresultsarecompared.Resultsshowthattheepilayer--sidemountingformhasmuchbetterheatdissipationcapabilitythanthesubstrate--sidemounting.

简介：Singlecrystal(100)InPsamplesand(0001)GaNepitaxiallayerswereirradiatedattheHeavyIonResearchFacilityinLanzhou(HIRFL)with86Krionsatroomtemperature.Theionfluencewasvariedfrom5×1010to1×1012cm?2.Additionally,thinaluminumfoilswithdifferentthickness(sometensofmicrometers)wereplacedinfrontofsomesamplestodeceleratetheSHI's.Ionbeamscanningwasusedtoirradiatethewholesamplesurfaceinauniformwayandmaintainednormalincidence.Topreventsampleheatingduringhigh-energyirradiation,thefluxwaskeptconstantbelow1.3×1010cm?2s?1.ThemodificationsofthesampleswereinvestigatedbyXRD.

简介：研究了一种基于InGaAs/InP多量子阱的全光偏振开关,讨论了相空间填充（PSF）效应引起的激子饱和以及光学非线性,计算了在抽运光下的阱中载流子布居数随时间的变化,推导出了探测光偏振态的主轴瞬态旋转角.计算结果表明,在100pJ飞秒脉冲抽运下该全光开关理论旋转角最大可达60°.