学科分类
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433 个结果
  • 简介:srzn2PO42:在大气中的高温固相反应合成Sm3+荧光粉。srzn2PO42:Sm3+荧光粉是通过紫外光有效激发(UV)和蓝色光,和发射峰被分配到2-6h54G5//2过渡(563nm),2-6h74G5//2(597nm和605nm)和2-6h94G5//2(644nm和653nm)。对srzn2发射强度(PO42:Sm3+的Sm3+浓度的影响,其浓度猝灭效应srzn2PO42:钐也观察到。当掺杂离子(=Li,Na和K)离子的发光强度,srzn2PO42:Sm3+可以明显增强。在国际照明委员会(CIE)的srzn2色坐标(PO42:Sm3+定位在橙红色的区域。结果表明,该荧光粉具有潜在的应用在白光发光二极管(LED)。

  • 标签: 掺杂离子 发光性能 NA 国际照明委员会 白光发光二极管 SM
  • 简介:Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.

  • 标签: 有机电发光器 有机多量子阱 有机半导体
  • 简介:在这项工作中,和两个新的荧光粉发光特性的合成:Pr3+CaYAlO4(CYA)和镨铽:CyA的发光二极管(LED)的影响。0.5%(原子百分比)Pr3+:环孢素A具有最大的亮黄色发射不同Pr3+浓度,根据3P0+3H4→1G4+1G4的交叉弛豫过程。Pr3+的能级图:环孢素A,特别是D级和4F51S0能级位置,讨论了。通过掺杂Tb3+离子,镨铽荧光粉的色坐标:CyA可调谐从黄色到白色区域。最后,用最强的发光色坐标(0.339,0.364)位于白色区可在0.3%Tb3+/0.5%Pr3+:CyA磷。

  • 标签: 白光发射 肺结核 公关 发光特性 环孢素A
  • 简介:王博士“电子组装工艺缺陷的分析诊断与解决”一、前言:目前中国已经成为全球电子制造业的中心,随着电子产品的高密化、环保化、低利润化、高质量要求,电子制造企业的生存越来越艰难,只有在保证产品功能的情况下提高产品质量、降低产品成本,才能在竞争激烈的市场中争得一席之地。

  • 标签: 培训 电子组装 产品质量 电子制造业 工艺缺陷 电子产品
  • 简介:Lanthanidehasattractedmuchattentioninthefieldofopticalcommunicationsinrecentyears.SomepropertyanalysesonopticalwaveguideofNd-dopedcrystalNdxY1-xAl3(BO3)4andNd:MgO:LiNbO3aremadeinthispaper,followedbyintroductionofthemethodsofexperimentationandtheoreticalcalculationfortheplanaropticalwaveguides.Therefractiveindexprofilesoftheopticalwaveguidesareanalyzed.Theaboveworkoffersusefulinformationforstudyonnewtypematerialsforopticalcommunications.

  • 标签: 光波导 离子注入 折射率 集成光学
  • 简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.

  • 标签: 硅化锗 半导体材料 化学气相沉积
  • 简介:Dy3+/Eu3+共掺杂的立方格子NaYF4单晶在~Φ×1厘米大小为10厘米高质量的改进布里奇曼法用氟化钾(KF)作为助熔剂生长。射线衍射(X射线衍射),吸收光谱,激发光谱和发射光谱测量的晶体的相位和发光性能的晶体。分析了激发波长和Dy3+和Eu3+离子浓度对发光特性的影响。NaYF4单晶的掺杂摩尔浓度的1.205%和0.366%的Eu3+,Dy3+具有优良的白色发光的色度坐标x=0.321,y=0.332。这表明Dy3+/Eu3+共掺的立方格子NaYF4单晶可以潜在的发光材料的紫外(UV)光激发的白光发光二极管(LED)。

  • 标签: 助熔剂生长 立方格子 共掺杂 单晶 光学性质 白光发光二极管
  • 简介:Chalcopyrite-typeCuInSe2nanoparticlesaresuccessfullypreparedbyusingIn2Se3nanoparticlesasaprecursorreactedwithcopperchloride(CuCl)solutionviaaphasetransformationprocessinlowtemperature.Thereactiontimeisakeyparameter.Afterthereactiontimeincreasingfrom0.5hto8h,In2Se3andCuClreactwitheachothergraduallyviaphasetransformationintoCuInSe2withoutanyintermediatephase.ThecrystallinestructureandmorphologyoftheCuInSe2nanoparticlesarecharacterizedbyX-raydiffraction(XRD)andfieldemissionscanningelectronmicroscopy(FESEM).ThediameterofCuInSe2nanoparticleswithgooddispersibilityrangesfrom10nmto20nm.ThebandgapoftheCuInSe2nanoparticlesis1.04eVcalculatedfromtheultraviolet-visible(UV-VIS)spectrum.

  • 标签: CulnSe2 纳米颗粒 相变过程 场发射扫描电子显微镜 化学过程 低温
  • 简介:1、引言目前,世界各国在推动第三代移动通信系统(3G)商用化的同时,已将研究重点转入Beyond3G或4G(下称B3G)移动通信的研究,在概念和技术上寻求创新和突破,以使无线通信系统容量和速率有十倍甚至百倍的大幅度提高。为适应未来发展的需要,B3G移动通信系统应当具备以下基本特征:无论何时何地,都能够为终端用户提供高分辨率业务;能够使用”空间分集”技术对抗更高频段上的电波传输特性,

  • 标签: B3G 平台框架 第三代移动通信系统 4G TDD 3G移动通信系统
  • 简介:我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围,它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦??

  • 标签: 激光辐照 纳米材料 球化 涂层材料 平均尺寸 能量密度
  • 简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.

  • 标签: 光子带隙光纤 光纤传感 乙炔 空心 气体混合物 C2H2
  • 简介:Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.

  • 标签: 红外光谱测量 热电薄膜 电性能 BI2TE3 退火处理 SI衬底
  • 简介:近日,CA宣布,上海市农业委员会信息中心已经成功实施CA数据分析解决方案CleverPathOLAP。上海市农业委员会信息中心技术部主任徐力说:“通过实施CA公司的CleverPathOLAP数据分析解决方案,我们希望实现标准化、自动化的农业信息数据的采集整理、分析体系,这将更有利于对农产品市场作出有效的决策。”

  • 标签: 农业信息化建设 解决方案 数据分析 信息中心 OLAP 农产品市场
  • 简介:1、B3G/4G通信系统概述1.1B3G/4G产生的背景移动通信自诞生之日起,便担负着传递消息、方便人们沟通的重任,到目前为止移动通信系统的主流业务是语音通信,大多数国家运营的是2G或2.5G的移动通信网络。随着通信技术、因特网及多媒体技术的发展,人们迫切希望移动通信能够提供更加丰富的服务,如图像传送、音视频点播等数据及多媒体业务,电信运营商也期待着未来的通信网络能够方便地加载新业务而无需频繁更换网络架构及设备。

  • 标签: B3G 4G 移动通信系统 标准化 移动通信网络 多媒体业务
  • 简介:0.概述近年来,中国的移动通信市场己开始从快速增长阶段进入到成熟阶段,随着3G的临近,新的运营商将会参与移动通信市场的竞争。面对日益激烈的竞争形势,中国移动作为国内移动通信市场占主导地位的运营商,如何处理现有GSM系统与3G之间的关系、制定合理的3G发展策略,以及顺利完成2G向3G过渡等,已成为面临的关键问题。

  • 标签: 中国移动 3G 策略研究 过渡 2G 移动通信市场
  • 简介:Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.

  • 标签: GESI 量子阱 UHV/CVD 透射电子显微镜
  • 简介:UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.

  • 标签: FLEXIBLE PULSED laser DEPOSITION resistive switching
  • 简介::Twonovelpoly[(3-alkyhhiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s]derivatives,poly[(3-butylthiophene-2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](PBTDMABQ)andpoly[-(3-octylthiophene2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](POTDMABQ),weresynthesized.Thebandgapsofthetwopolymersarecalculatedas1.75eVforPBTDMABQand1.69eVforPOTDMABQ,respectively.Thehomogenousfilmsofthetwopolymerswerepreparedandtheirthird-ordernonlinearopticalpropertieswerestudiedbythebackwarddegeneratefour-wavemixingat532nm.Byusingtherelativemeasurementtechnique,thethird-ordernonlinearopticalsusceptibilitiesofPBTDMABQandPOTDMABQarecalculatedas5.62×10^-9and1.22×10^-8ESU,respectively.Itisfoundthatsubstitutedalkygroupshavestrongeffectsonthebandgapandnonlinearopticalpropertiesofthetwopolymers.Therelativelybigthird-ordernonlinearopticalsusceptibilitiesandsmallbandgapofPOTDMABQresultedmainlyfromthelongeralkylwithstrongelectron-donatingabilitycanenhancethedelocationdegreeofconjugatedπelectronics.

  • 标签: 衍生物 衰退四波混合 三阶非线性磁化率 带隙