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简介:Wereportatype-ⅡGaSb-basedinterbandcascadelaseroperatingacontinuouswaveatroomtemperature.Thecascaderegionofinterbandcascadelaserwasdesignedusingthe‘W’configurationoftheactivequantumwellsandthe‘CarrierRebalancing’methodintheelectroninjector.Thedeviceswereprocessedintonarrowridgesandmountedepitaxialsidedownonacopperheatsink.The25-μm-wide,3-mm-longridgewithoutcoatedfacetsgenerated41.4mWofcontinuouswaveoutputpoweratT=15℃.Andalowthresholdcurrentdensityof267A/cm~2isachieved.TheemissionwavelengthoftheICLis3452.3nmat0.5A.
简介:Wereportlow-noise,high-performancesingletransversemode1.3μmInAs/GaAsquantumdotlasersmonolithicallygrownonsilicon(Si)usingmolecularbeamepitaxy.Thefabricatednarrow-ridge-waveguideFabry–Perot(FP)lasershaveachievedaroom-temperaturecontinuous-wave(CW)thresholdcurrentof12.5mAandhighCWtemperaturetoleranceupto90°C.Anultra-lowrelativeintensitynoiseoflessthan-150dB∕Hzismeasuredinthe4–16GHzrange.Usingthislow-noiseSi-basedlaser,wethendemonstrate25.6Gb/sdatatransmissionover13.5kmSMF-28.Theselow-costFPlaserdevicesarepromisingcandidatestoprovidecost-effectivesolutionsforuseinuncooledSiphotonicstransmittersininter/hyperdatacentersandmetropolitandatalinks.
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