简介:Thetransportprocessof12CionsinwaterwasstudiedwithSRIMcodeandGeant4toolkit.TheSRIMresultsindicatethatthetransversediffusionof12Cionbeamcausesdistortionofenergydepositalongthebeamdirection.Thedistortionbecomesmorenotableasthetrans-versediffusionincreases.ThesimulationresultsofGeant4indicatethattheinfluenceofsecondaryfragmentsonenergydepositdistributionwouldbethemainfactorcausingthedistortioninhigherenergyrange.Intheregionadjacenttothebeamlinewherethecontributionfrom12Cionsdomi-nates,thecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfrag-mentsexceedthatof12C.Amongallthesecondaryfragments,thecontributionsofH,HeandBionsaremostlynotable.Itisalsofoundthatsomepositron-emittingsecondaryfragmentscouldbeveryusefulforpositionemittingtomography(PET).
简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.