Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1

摘要 A0.18lmCMOSlownoiseamplifier(LNA)byutilizingnoise-cancelingtechniquewasdesignedandimplementedinthispaper.Current-reuseandself-biastechniqueswereusedinthefirststagetoachieveinputmatchingandreducepowerconsumption.ThecoresizeoftheproposedCMOSLNAcircuitwithoutinductorwasonly128lm9226lm.ThemeasuredpowergainandnoisefigureoftheproposedLNAwere20.6and1.9dB,respectively.The3-dBbandwidthcoversfrequencyfrom0.1to1.2GHz.Whenthechipwasoperatedatasupplyvoltageof1.8V,itconsumed25.69mW.ThehighperformanceoftheproposedLNAmakesitsuitableformultistandardlow-costreceiverfront-endswithintheabovefrequencyrange.

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Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz

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Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz

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