摘要
Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.
出版日期
2012年07月17日（中国期刊网平台首次上网日期，不代表论文的发表时间）
